N-InP Schottky diode structure and a method of making the same

摘要

A new Schottky diode structure, Pt/Al/n-InP, is disclosed in the present invention. The thickness of Al layer of the Schottky diode structure is restricted in a range of about 80-120 Å. This structure gives a barrier height of 0.74 eV and an ideality factor of 1. 11 after it was annealed at 300° C. for 10 min. This is due to the formation of Aluminum-oxide, as the interfacial layer to improve barrier height. A method of preparing this Schottky diode structure is also disclosed in the present invention.