InGaAs∕InAlAs Double Quantum Wells as Starting Structures for Quantum Logic Gates

摘要

The detection of both symmetric and anti‐symmetric electron states in DQWs by an optical method is described in this paper. Values of the symmetric and anti‐symmetric splitting (SAS‐gap) determined in this way are used for interpretation of the beating effect in the SdH oscillations observed at low temperatures in the external magnetic field. SAS‐splitting of electron states in DQWs clearly exists at room temperature and electrons in symmetric and anti‐symmetric states have different statistics so these states can be identified in electron transport.