Frequency Characteristics Research for the Negative Resistance Oscillations Phenomenon of a Silicon Magnetic Sensitivity Transistor

摘要

A silicon magnetic sensitivity transistor (SMST) with negative resistance oscillations phenomenon is presented in this paper, which is constituted by emitter (E), base (B) and collector (C). The SMST chip is fabricated on <100> orientation high resistivity C-type silicon cup by using MEMS technology. Experiment results show, when external magnetic field 5=0 T, base injection current I_b, is the scope of 1.5mA to 1.7mA and V_(CE) is greater than 4.0V, the collector current I_c appears negative resistance oscillation phenomenon, the oscillation frequency will increase with the increase of the V_(CE).I_c changes with external magnetic field B, where V_(CE) and I_b are constant. With the condition of the I_b=1.5 mA and V_(CE)=9.0 V, the oscillation frequency of 5=0 mT and B=-l50 mT are 5.88 kHz and 7.60 kHz, respectively.