Secondary Breakdown, Radiation Resistance and Frequency Response of Silicon Transistors

摘要

This report points out the considerations that have to be taken into account when choosing a transistor which has good neutron radiation resistance and, in addition, secondary breakdown performance. There appears to be a point where optimum performance is obtained considering both requirements. However, the representation indicated can only be considered a static case since secondary breakdown is itself dependent on the amount of neutron exposure the device receives. (Author)