AIGaN/GaN/AIGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

摘要

AIGaN/GaN/AIGaN double heterostmcture field-effect transistors (DHFET) with high breakdown voltage and low on-resistance were fabricated on silicon substrates. A linear dependency of the breakdown voltage on the buffer thickness and on the buffer Aluminium concentration was found. A breakdown voltage as high as 830 V and an on-resistance as low as 6.2 Ω·mm were obtained in devices processed on 3.7 μm buffer thickness. The gate-drain spacing was 8 μm and the devices did not have any field plates.