Static and Dynamic Analysis of Split-Gate RESURF Stepped Oxide (RSO) MOSFETs for 35 V Applications

摘要

In this work, the static and dynamic performance of three different proposed trench MOSFET architectures for a 35 V breakdown range have been analyzed by means of extensive TCAD simulations. The trench field-plate in the drift region in RSO MOSFET structures highly improves the Ron-sp/VBR trade-off in comparison with the conventional UMOS counterpart. The Split-Gate RSO MOSFET is an alternative solution in order to reduce the gate-to-drain charge and capacitance, therefore further reduce the switching losses with respect to RSO MOSFET.