Techniques for Investigation of Solder Interconnect Electromigration under Time Varying Current Stressing

摘要

This paper reviews and summarizes previous research of symmetrically alternating and pulsed current stimulus electromigration in device interconnects serving as a historical precis providing a foundation and motivation for further research into of electromigration under arbitrary current profiles. Modified mean time to failure models for interconnects under both unidirectional and bidirectional pulsed are discussed. Ongoing research is presented. Early modeling and calculations which take into account non-uniform current densities due to frequency effects are presented. Finite element modeling will focus on primary operating frequency, interconnect size, and interconnect shape and how these parameters dictate the current density profile.