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Wafer-Level Integration Technology with Heterogeneous Chip Redistribution and Inter-Chip Layer Process

机译:具有异构芯片再分配和片间层过程的晶圆级集成技术

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The authors have proposed a pseudo-SOC (System on Chip) technology, a novel integration technology forming inter-chip layer with semiconductor process techniques on a chip-redistributed wafer with heterogeneous device chips encapsulated with inter-chip resin. This is a novel integration technology realizing a thinned package structure with fine inter-chip layer, unattainable with the previous SIP (System in Package) technology and integration of heterogeneous devices unattainable with the previous SOC technology. A stress analysis for realizing a pseudo-SOC structure for minimizing the strain in the integrated chips was carried out. A pseudo SOC with narrow gap and thinned structure was fabricated. An RF-receiver was also demonstrated using pseudo-SOC technology and the integration density was confirmed to be 16 times higher than the conventional SIP technology.
机译:作者提出了一种伪SOC(芯片系统)技术,一种新的集成技术,形成具有芯片再分布晶片的芯片再分布晶片的芯片层层,其具有封装用片状树脂的异质装置芯片。这是一种新型集成技术,实现了具有精细芯片层层的薄膜结构,与先前的SIP(包装中的系统)技术和与先前SOC技术无效的异构器件集成,无法实现。进行了用于实现用于最小化集成芯片中的应变的伪SOC结构的应力分析。制造了具有狭窄间隙和稀疏结构的伪SOC。还使用伪SOC技术证明RF接收器,并且确认集成密度比传统SIP技术高16倍。

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