Formation of titanium silicide was studied using a "hot wall" single wafer rapid thermal furnace (SRTF) system. Average sheet resistance and uniformity of TiSi{sub}2 films before and after processing, as well as process repeatability were evaluated. We also collected data for annealing of implanted wafers, oxide thickness & uniformity before and after dry and wet oxidation. We use this data to demonstrate process repeatability for anneals in the SRTF system. Comparison with wafers processed with Altis Semiconductor tool of record (TOR) gave some useful information regarding differences between wafers processed in lamp-based RTA and SRTF systems.
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