Evaluation of Trisilylamine for HfSiO{sub}x Atomic Layer Deposition

摘要

Hafnium silicon oxide thin films were grown by atomic layer deposition using a typical hafnium precursor (TDEAH, Hf(NEt{sub}2){sub}4), and a newly considered silicon precursor, trisilylamine (TSA, (SiH{sub}3){sub}3N) with an ozone/oxygen mixture. The TSA molecule is a highly volatile molecule (315 Torr at 25°C) and is therefore easy to deliver into the reactor. TSA has the additional advantage of being carbon-free, hence minimizing the carbon incorporation. Deposits that were obtained exhibited smooth, featureless surfaces when deposited between 200 and 275°C at 1 Torr in a hot wall reactor.