Composition Control of TaSi{sub}xN{sub}y Thin Films by Chemical Vapor Deposition for Future n-MOSFET Metal Gate Electrode

摘要

TaSi{sub}xN{sub}y has been examined as a metal gate material for n-MOSFETs of the future. In order to control the composition of the TaSi{sub}xN{sub}y film, a CVD method has been newly developed, using a commercial-based 300mm machine. The CVD film composition can be modified by stacking alternate depositions of TaN and Si. The effective workfunction of the gate electrode can be adjusted through the average composition of the TaSi{sub}xN{sub}y. Excellent transistor characteristics have been confirmed, using HfSiON gate dielectric and a TaSi{sub}xN{sub}y gate electrode.