Release for production of a 150GHz, 125nm gate 40 In Metamorphic GaAs HEMT MMIC process

摘要

This paper deals with the release for production of a 150 GHz, 125 nm gate 40% In metamorphic GaAs HEMT MMIC process. It includes a discussion on the importance of the process development sequence in ensuring a production release. Key points are the objective performance definition and the understanding of the critical process parameters so as to establish an effective control plan vital for a good process control in production.