The effect of low-temperature annealing on the electrical and structural properties of epitaxial layers of CMT and MMT

摘要

The effect of the low-temperature annealing (2 hours at 120°C and 2 hours at 200°C) on epitaxial layers of HgCdTe and HgMnTe was investigated. HgCdTe and HgMnTe layers were produced by the liquid-phase epitaxial method. The Hall effect electroconductivity X-ray diffraction before and after annealing were determined. It was shown that low-temperature annealing produces almost no change in electro-physical parameters of HgMnTe layers but about 90% of HgCdTe layers had increased concentration of charge carries or changed conductivity type. After thermal annealing the crystal surface quality of the HgMnTe layers was improved. The layers HgCdTe do not show such a tendency.