Effects of Rapid Thermal Annealing and Hydrogen Passivation on Crystalline Silicon Thin-film Solar Cells on Glass made by PECVD Solid-Phase Crystallization

摘要

In this paper we present the effects of rapid thermal annealing (RTA) and hydrogen passivation on polycrystalline silicon (pc-Si) thin-film solar cells made on glass by solid phase crystallization (SPC) of plasma-enhanced chemical vapor deposited (PECVD) amorphous silicon (a-Si). RTA plateau times at a temperature of 900°C are varied from 60 to 540 seconds. Hydrogena-tion is performed at about 500°C in a remote plasma PECVD machine. 1-Sun open-circuit voltage (V_(oc)) measurements are taken after the crystallization, RTA and hydrogenation processing steps and analyzed using a 2-diode model.