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Investigation of the SiN Deposition and effect of the hydrogenation on solid-phase crystallisation of evaporated thin-film silicon solar cells on glass

机译:SiN沉积及其氢化对玻璃上蒸发薄膜硅太阳能电池固相结晶影响的研究

摘要

One of the poly-Si thin-film cells developed at the University of New South Wales (UNSW) is the EVA cell. In this work, SiN films for EVA cells as an antireflection/barrier coating were investigated. In addition, the effect of hydrogenation pre-treatment of solid phase crystallisation (SPC) on grain size and open-circuit voltage (Voc) was investigated.The SiN films deposited by PECVD were examined for uniformity of the thickness and the refractive index of the films across the position of the samples in the PECVD deposition system. A spectrophotometric analysis was used to determine these film properties. It was found that these properties were very uniform over the deposition area. Good repeatability of the depositions was also observed.A series of SiN film depositions by reactive sputtering were also performed to optimize the deposition process. Parameters adjusted during the deposition were nitrogen flow rate, substrate bias, and substrate temperature. By investigating the deposition rate, refractive index, and surface roughness of the films, the three deposition parameters were optimised.The effects of post SiN deposition treatments (a-Si deposition, SPC, RTA, and hydrogenation) on thickness and refractive index of both SiN films deposited by PECVD and reactive sputtering were investigated by using samples which have the same structure as the EVA cells. The thickness of the PECVD SiN films decreased about 6 % after all the treatments. On the other hand, the thickness reductions of the reactively sputtered SiN films were very small. The refractive index of the PECVD SiN films increased about 0.6 % after the treatments, whereas that of the reactively sputtered SiN films decreased 1.3 % after the treatments.As a possible method to improve the performance of EVA cells, hydrogenation of a-Si was investigated as a pre-treatment of SPC process. There were no obvious differences in the grainsize and the Voc of the EVA cells with and without the hydrogenation. Therefore it is likely that the hydrogenation pre-treatment of SPC does not have a beneficial effect on the performance of EVA cells.
机译:新南威尔士大学(UNSW)开发的多晶硅薄膜电池之一是EVA电池。在这项工作中,研究了用于EVA电池的SiN膜作为增透膜。此外,研究了固相结晶氢化(SPC)的氢化预处理对晶粒尺寸和开路电压(Voc)的影响。检查了通过PECVD沉积的SiN膜的厚度和折射率的均匀性膜在PECVD沉积系统中横跨样品位置的薄膜。使用分光光度分析来确定这些膜的性能。发现这些性质在沉积区域上非常均匀。还观察到了良好的沉积重复性。还进行了通过反应溅射的一系列SiN膜沉积,以优化沉积工艺。在沉积过程中调节的参数是氮气流速,衬底偏压和衬底温度。通过研究薄膜的沉积速率,折射率和表面粗糙度,优化了三个沉积参数.SiN后沉积处理(a-Si沉积,SPC,RTA和氢化)对两者的厚度和折射率的影响通过使用与EVA电池具有相同结构的样品研究了通过PECVD和反应溅射沉积的SiN膜。经过所有处理后,PECVD SiN膜的厚度减少了约6%。另一方面,反应溅射SiN膜的厚度减小非常小。处理后PECVD SiN膜的折射率增加约0.6%,而反应溅射SiN膜的折射率在处理后降低1.3%。作为提高EVA电池性能的一种可能方法,研究了a-Si的氢化作为SPC工艺的预处理。有和没有氢化的情况下,EVA电池的晶粒尺寸和Voc没有明显差异。因此,SPC的氢化预处理可能不会对EVA细胞的性能产生有益的影响。

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