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Polycrystalline laser-crystallized silicon thin-film solar cells deposited on glass substrates

机译:沉积在玻璃基板上的多晶激光结晶硅薄膜太阳能电池

摘要

The invention relates to a multicrystalline laser-crystallized silicon thin layer solar cell deposited on a glass substrate (a), which is configured for illuminating from the substrate side, and to a production method for the cell. Said solar cell comprises a laser-crystallized multicrystalline silicon layer (b 1 , b 2 ), whose lower layer region (b 1 ), which is situated on the substrate (a) and provided as a nucleation layer and, at the same time, as a lower transparent electrode, is p-doped (alternatively, n-doped). The silicon layer's second layer region (b 2 ), which faces away from the substrate is p-doped (alternatively, n-doped) less than the nucleation layer and serves as an absorber layer. The edge lengths of the crystallites in the multicrystalline layer (b 1 , b 2 ) are longer than the layer is thick. The inventive solar cell also comprises a laser-crystallized, n-doped (alternatively, p-doped) silicon layer (c), which is located on the silicon layer (b 1 , b 2 ) and which serves as an emitter layer, and comprises a back-reflecting contact layer (A 1 ) that serves as an upper electrode on the emitter layer (c).
机译:本发明涉及沉积在玻璃基板(a)上的多晶激光结晶硅薄层太阳能电池,其构造为从基板侧进行照明,并且涉及该电池的制造方法。所述太阳能电池包括激光结晶的多晶硅层(b 1,b 2),其下层区域(b 1)位于衬底(a)上并作为成核层提供,并且同时,作为下部透明电极的p掺杂(或者,n掺杂)。背离衬底的硅层的第二层区域(b 2)小于成核层p掺杂(或者,n掺杂),并用作吸收层。多晶层(b 1,b 2)中的微晶的边缘长度长于该层的厚度。本发明的太阳能电池还包括激光结晶的,n掺杂(或者p掺杂)的硅层(c),其位于硅层(b 1,b 2)上并且用作发射极层,以及包括背反射接触层(A 1),其用作发射极层(c)上的上电极。

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