ELECTRICAL CHARACTERISTICS OF SOI-LIKE STRUCTURES FORMED IN NITROGEN OR OXYGEN IMPLANTED SILICON TREATED UNDER HIGH PRESSURE

摘要

Electrical parameters of SOI-like (silicon-on-insulator) structures formed in oxygen or nitrogen implanted silicon annealed at high temperature under atmospheric or enhanced hydrostatic pressure were compared and discussed. Based on current-voltage, capacitance-voltage, and cross-sectional transmission electron microscopy it was found that by application of pressure during post-implantation anneals one could change the defect distribution between the insulator layer and the silicon, the charges at the interfaces and the carrier concentration in the top silicon layer.