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首页> 外文期刊>Physica status solidi, B. Basic research >Pressure related defect engineering in silicon-on-insulator-like structures produced by either oxygen or nitrogen ion implantation
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Pressure related defect engineering in silicon-on-insulator-like structures produced by either oxygen or nitrogen ion implantation

机译:氧或氮离子注入产生的类绝缘体上硅结构中与压力有关的缺陷工程

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摘要

Pressure-related effects in silicon-on-insulator-like structures fabricated in either nitrogen or oxygen implanted silicon during subsequent annealing are analyzed. Among them are the removal of radiation defects from the top silicon layer, some degradation of the buried insulator, pressure dependence of charges at the Si/SiO2 (or Si/SiNx) interface, formation of the electrically active centers in the top silicon layer and the substrate. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
机译:分析了在随后的退火过程中,在注入氮或氧的硅中制造的类似绝缘体上硅的结构中的压力相关效应。其中包括从顶部硅层去除辐射缺陷,掩埋绝缘体的某些退化,Si / SiO2(或Si / SiNxx)界面处电荷的压力依赖性,在顶部硅层中形成电活性中心以及基板。 (C)2007 WILEY-VCH Verlag GmbH&Co. KGaA,Weinheim。

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