Electrical properties of multiple-layer structures formed by implantation of nitrogen or oxygen and annealed under high pressure

摘要

Silicon-on-insulator-like structures formed in either oxygen- or nitrogen-implanted silicon during anneals under atmospheric and enhanced hydrostatic pressure are characterized by means of electrical techniques (current-voltage and capacitance-voltage measurements). It was found that the application of high pressure (～1 GPa) stimulates the formation of a perfect top silicon layer and results in the degradation of the properties of the buried insulator. The latter effect is caused by defect accumulation in the buried insulator and leads to a decrease in the effective thickness of the insulator layer as extracted from capacitance-voltage measurements. Pressure-stimulated formation of electrically active centers (donors and acceptors) in the top silicon layer and substrate was found. The fixed charge in the oxide was found to be independent on the pressure applied during anneals, whereas the negative charge in the nitride increased with pressure.