Structure of oxygen - Implanted silicon single crystals treated at >= 1400 K under high argon pressure

摘要

The structure of oxygen - implanted (up to a dose 6x10(17) cm(-2)) silicon, Si:O, treated at 1400 - 1550 K under high (up to 1.5 GPa) argon pressure, was investigated by numerous methods. The oxygen distribution peak narrowed, the dimensions of extended defects decreased and the peak intensity in the Si - O - Si asymmetric stretching vibrational mode diminished with pressure, That effects are explained by decreased misfit at the SiO2-x / Si boundary and more numerous nucleation sites created in Si:O treated at high pressure. [References: 11]