首页>
外国专利>
Method for production of semiconductor structures on silicon germanium base, involves bringing germanium ions in volume of single crystal silicon wafer by ion implantation with high dose
Method for production of semiconductor structures on silicon germanium base, involves bringing germanium ions in volume of single crystal silicon wafer by ion implantation with high dose
展开▼
机译:在硅锗基上生产半导体结构的方法,涉及通过高剂量离子注入使锗离子进入单晶硅晶片的体积
展开▼
页面导航
摘要
著录项
相似文献
摘要
The method involves bringing germanium ions in a volume of a single crystal silicon wafer by ion implantation with high dose, and exposing created arrangement to an intensive light pulse. The created arrangement is implanted with boron ions with energy, so that a positive negative transition is produced in the center germanium.
展开▼