首页> 外文会议>Electrochemical Society Meeting >THERMALLY-OXIDIZED HfO2 ON Se-PASSIVATED n-TYPE Si(100)
【24h】

THERMALLY-OXIDIZED HfO2 ON Se-PASSIVATED n-TYPE Si(100)

机译:Se-钝化的N型Si(100)上的热氧化HFO2

获取原文

摘要

Se passivation of Si(100) creates a surface which is free of dangling bonds. Electrically, the passivation may also result in a surface free of surface states. It is interesting to examine the effect of Se passivation on the electrical properties of the high-k dielectric/Si(100) interface. In this paper, we report our results on interface engineering between HfO2 and n-type Si(100) with Se passivation. Hf of -40 A was deposited on Se-passivated Si(100) by e-beam evaporation and then oxidized in O3 or O_2 to form HfO_2. I-V and C-V characterization was performed to examine the electrical properties of the HfO2/Se/Si(100) interface. O3 oxidation seems to over-oxidize into the n-type Si substrate, causing a large negative shift in flat-band voltage. Samples annealed in O2 below -35O°C show much improved properties: a smaller EOT, a flat-band voltage close to the theoretical value, and a smaller leakage current. Our results also demonstrate that Se passivation of Si(100) suppresses Si oxidation in O2 up to 600°C.
机译:Si(100)的钝化产生了无悬空键的表面。电,钝化也可能导致无表面状态的表面。有趣的是检查SE钝化对高k电介质/ Si(100)界面的电性能的影响。在本文中,我们在HFO2和N型SI(100)之间的界面工程与SE钝化的结果报告了我们的结果。通过电子束蒸发将-40a钝化的Si(100)沉积HF,然后在O 3或O_2中氧化以形成HFO_2。执行I-V和C-V表征以检查HFO2 / SE / SI(100)接口的电特性。 O3氧化似乎过度氧化到N型Si衬底中,导致平带电压的大负移。在低于-350°C的O2中退火的样品显示出大量改进的性能:较小的EOT,靠近理论值的平带电压,漏电流较小。我们的结果还表明Si(100)的SE钝化抑制了O2高达600℃的Si氧化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号