Single crystal of silicon with 100 orientation, which is doped with n-type dopant, and method for producing such a single crystal

摘要

Single crystal silicon with 100 orientation is doped with n-type dopant and comprises a starting cone, a cylindrical portion and an end cone, a crystal angle being not less than 20° and not greater than 30° in a middle portion of the starting cone, the length of which is not less than 50% of a length of the starting cone, and edge facets extending from a periphery of the single crystal into the single crystal, the edge facets in the starting cone and in the cylindrical portion of the single crystal in each case having a length which is not more than 700 μm.