Annealing of Aluminum Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing

摘要

Furnace annealing and lamp annealing of aluminum implanted layers in 4H silicon carbide (SiC) were investigated with respect to surface degradation and electrical parameters. A sheet resistance of about 20k OMEGA/square was obtained for an aluminum implantation dose of 1.2 centre dot 10~(15)cm~(-2) and annealing in the furnace at 1700 deg C for 30min. For the same implantation dose, lamp annealing at 1770 deg C for 5min resulted in a three times higher sheet resistance of 60k OMEGA/square. The surface roughness was best for the lamp system and stayed below 1 nm for Al doses lower than 1 centre dot 10~(15)cm~(-2).