In-situ X-ray measurements of defect generation during PVT growth of SiC

摘要

A standard inductively heated PVT growth furnace modified for diffraction experiments with high energy x-rays in focussing Laue geometry was built. The growth furnace will be placed in front of a tungsten anode high energy x-ray source. The Laue diffraction pattern of the growing crystal can be detected on a CCD camera detector. Evolution of crystalline defects as a function of the growth process parameters will be infered from the diffraction experiments. The furnace design and results of first test measurements serving as proof of concept are reported.