Epitaxial Growth on Metal Bonded SiC Substrates: Transmission Electron Microscopy and Photoluminescence

摘要

QuaSiC~(TM) substrates can be obtained by transferring a single crystal SiC layer onto a poly SiC substrate using the Smart Cut~(TM) technology. In order to overcome the difficulty of limited thickness, an important improvement has been demonstrated, which consists in obtaining thick SiC structure by growing epitaxial SiC layers on top of transferred layers. The aim of this work is a structural analysis of such layers by Transmission Electron Microscopy and Photoluminescence.