Silicon carbide(SiC)is regarded as an important material in nuclear energy system and semiconductor industry,because of its excellent physical,electronic and optical properties.It is inevitable that dense atomic He atoms produced by(n,)nuclear transmutation reaction.Due to the low solubility of He atoms in SiC,He atoms are easy to be trapped by vacancies to form helium-vacancy clusters.After thermal annealing,helium atoms will escape from vacancies,to form cavities.In semiconductor technology,He implantation-induced cavities have lots of important applications.Therefore,the study of He-implanted SiC is critical.He-implantation-induced cavities have been extensively investigated.He-implantation-induced dislocation loops also have been investigated.Chen et al.observed interstitial-type dislocation loops associated with He bubbles due to the release of bubble interior pressure via emitting interstitials[1].These interstitials agglomerate into dislocation loops.It is consistent with previous results observed in the case of He-implanted 6H-SiC[2].What’s more,Barbot et al.regarded that the growth of the Frank loops lead to the formation of stacking faults,which do not result from the agglomeration of interstitials[3].
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