New findings of NBTI in partially depleted SOI transistors with ultra-thin gate dielectrics

摘要

This work presents, for the first time, a comprehensive study of NBTI in partially depleted (PD) SOI PMOSFETs with gate dielectric thickness as small as /spl sim/11/spl Aring/ for understanding of both general and SOI-specific NBTI mechanisms. Body tied (BT) transistors will be studied intensively to interpret their worse NBTI degradation than floating body (FB). NBTI self-healing will be also investigated.