Bond-pad is an important structure of a microelectronic device because it plays the role of enabling the device to communicate with other external devices. Its integrity directly affects the performance of the microelectronic device. This paper presents our investigation on bond-pad Inter-Metal Dielectric (IMD) crack issue. Our investigation has considered the following factors: top via pattern (sea of vias/without vias) for bond-pad, top metal thickness (8 kA /9 kA /10 kA) and probe overdrive force (30 um/50 um/70 um). The bond-pad IMD cracks were exposed and decorated by chemicals (Aqua Regia and Hydrochloric acid), and inspected by an optical microscope. A scoring system was designed to assess the dependence of the bond-pad IMD crack severity on the above-mentioned factors. The investigation results showed that the IMD crack severity is strongly dependent on the probe overdrive force, top via pattern, and only slightly on top metal thickness.
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机译：键合焊盘是微电子器件的重要结构，因为它起到使设备与其他外部设备通信的作用。它的完整性直接影响微电子器件的性能。本文介绍了对金属间电介质（IMD）裂纹问题的研究。我们的调查已考虑以下因素：顶部通过图案（通孔/没有通孔的海洋），用于粘接垫，顶部金属厚度（8 ka / 9 ka / 10ka）和探头过驱动力（30 um / 50 um / 70 um ）。通过化学品（Aqua Regia和盐酸）暴露和装饰键合焊盘IMD裂缝，并由光学显微镜检查。评分系统旨在评估键合焊盘IMD裂纹严重程度对上述因素的依赖性。调查结果表明，IMD裂纹严重程度强烈依赖于探针过驱动力，顶部通过图案，并且仅略微呈顶部金属厚度。
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