The Effects of Gate Metals on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors

摘要

The impact of different gate metals-Ni/Au, Ti/Au and Mo/Ti/Au on the performance of p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) are investigated in this work. Compare to Ni/Au-gate HEMTs, the devices with a Mo/Ti/Au gate can improve 32% of the breakdown voltage with a trade-off of reducing 11% of operating current at LGD=6um. We also demonstrated a noticeably high breakdown voltage of more than 1600V of Ni/Au- and Mo/Ti/Au-gate p-GaN/AlGaN/GaN HEMTs.