DEVICE AND SEMICONDUCTOR STRUCTURE FOR IMPROVING THE DISADVANTAGES OF P-GAN GATE HIGH ELECTRON MOBILITY TRANSISTOR

摘要

A device includes a first transistor and a second transistor. The first transistor includes a first gate terminal coupled to the first source terminal, a first source terminal, and a first drain terminal. The second transistor includes a second gate terminal coupled to the first drain terminal, a second source terminal, and a second drain terminal.