ALL AROUND GATE-TYPE SEMICONDUCTOR DEVICE FOR IMPROVING THE MOBILITY OF AN ELECTRONICS AND A HOLE IN A CHANNEL BY IMPROVING THE STRUCTURE OF A VERTICAL CHANNEL AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An all around gate-type semiconductor device and a manufacturing method thereof are provided to improve a current supply capability by improving a short channel effect and a mobility of an electronics and a hole.;CONSTITUTION: A drain contact(21), a source contact(22) and a gate contact(23) are formed on the top of an insulating layer(20). The drain contact is connected to a silicon-germanium post(13) or a silicon-germanium post and a silicon layer(14). The source contact is touched with the silicon layer by etching insulating layers(20,16). The source contact is separated from the gate electrode(19) by the insulating layer. The gate contact is connected to the gate electrode. The gate electrode surrounds the vertical type channel including the silicon-germanium post.;COPYRIGHT KIPO 2010