Stability and Temperature Dependence of Dynamic RON in AlN-Passivated AlGaN/GaN HEMT on Si Substrate

摘要

We carried out detailed characterization and evaluation of dynamic performance of high-voltage AlGaN/GaN high electron mobility transistors (HEMTs) with AlN/SiN_x passivation by means of pulsed I-V measurements. Transient OFF-to-ON switching tests verify the effectiveness of surface passivation by PE-ALD grown AlN epitaxial layer. The dynamic ON-resistance (RON) measured 350 ns after the switching event (500 ns) remains as low as only 1.08 times the static RON with an OFF-state drain bias of 60 V. Less than 10% degradation in dynamic RON is achieved under 40-V switching at various frequencies of 1-133 kHz within a wide temperature range of –50–200°C. The stability of dynamic RON is also confirmed with a simple approach by monitoring the pulsed current at a drain bias of ～1 V for 100 consecutive switching cycles.