Dynamic Performance of AlN-Passivated AlGaN/GaN MIS-High Electron Mobility Transistors Under Hard Switching Operation

摘要

High-frequency and high-temperature dynamic performance of plasma-enhanced atomic layer deposition AlN-passivated enhancement-mode GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) has been investigated under hard switching conditions. Low dynamic ON-resistance ( degradation with small frequency dispersion and weak temperature dependence is obtained. The effectiveness of AlN passivation in suppressing current collapse is proved even under hard switching operations, which, according to other reports of SiN-passivated devices, could worsen the dynamic degradation due to the trapping of additional hot electrons.