Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

摘要

We report that dynamic Ron can increase with off-state stress time, only saturating after 300s. We show that a wide range of dynamic Ron behaviors is observed in small devices whereas large devices show behavior characteristic of an average over the small devices. This behavior can be explained by preferential vertical leakage paths separated by tens of microns. Long time constant dispersion is observed in some wafers but this is suppressed in later generation epitaxy.