DYNAMIC SUBSTRATE BIAS SYSTEM SUPPRESSING NEGATIVE BIAS TEMPERATURE INSTABILITY AND METHOD FOR THE SAME

摘要

PPROBLEM TO BE SOLVED: To improve performance of a circuit by a system and a method for suppressing negative bias temperature instability in a P-channel MOS transistor. PSOLUTION: The system for suppressing the negative bias temperature instability in the P-channel CMOS transistor and a method for the system are disclosed. The system includes the P-channel CMOS transistor and a voltage control circuit. A source pole for the P-channel CMOS transistor in the system is connected to a power supply, and the voltage control circuit is mounted so as to output a first potential and a second potential. The first potential differs from the second voltage, the first potential is lower than a power supply voltage and the second potential is higher than or equal to the power supply voltage. When the P-channel MOS transistor in the system is turned on, the first potential is applied to a substrate for the P-channel MOS transistor. When the P-channel MOS transistor is turned off, the second potential is applied to the substrate for the P-channel MOS transistor. PCOPYRIGHT: (C)2010,JPO&INPIT