3-5 μm InGaAs/AlGaAs QWIP Heterostructures growth by Metal Organic Chemical Vapor Deposition

摘要

InGaAs semiconductor heterostructures with multiple quantum wells for large-scale photodetectors on 3-5 spectral range were grown by low pressure metalorganic chemical vapor deposition. Growth conditions were optimized to obtain highly uniform heterostructures which can be used for producing of photodetector arrays. Growth temperature was 750°C, pressure - 60 torr Test photodetectors showed detectivity D=5,65x10~9sm·Hz~(1/2)·W~(-1) at the spectral sensetivity maximum wavelength 5.2 μm at measurement temperature 77 K. These results demonstrate potential possibility to use InGaAs/ AlGaAs heterostructures for manufacturing of large-scale photodetector arrays on 3-5μm spectral range. The ways of further photodetector parameters improvement are suggested.