A Method to Overcome Self-Heating Effects in SOI MOSFETs

摘要

Self heating of a MOS device will reduce performance. Drain current decreases and long term reliability can be affected. In SOI devices, self-heating is an even greater problem due to the buried oxide. By adding a path from SOI to substrate that has a high thermal conductivity and low electrical conductivity, the negative effects of self-heating can be reduced.