机译:使用四端子栅极电阻技术直接评估块状和超薄BOX SOI MOSFET中的自热效应
Department of Electronics and Electrical Engineering, Keio University, Yokohama, Japan;
National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan;
National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan;
National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan;
Department of Electronics and Electrical Engineering, Keio University, Yokohama, Japan;
Logic gates; MOSFET; Temperature measurement; Resistance; Silicon-on-insulator; Semiconductor device measurement; Current measurement;
机译:重离子撞击对具有超薄栅极氧化物和不同应变诱导技术的全耗尽SOI MOSFET的影响
机译:SOI MOSFET中的自发热效应及其通过小信号电导技术进行测量
机译:通过数值模拟比较分析体和单栅极超薄SOI MOSFET的RF和噪声性能
机译:短通道体和超薄BOX SOI MOSFET自热效应(SHE)的比较:掺杂阱,环境温度和SOI / BOX厚度对SHE的影响
机译:超薄氧化ha门控MOSFET的迁移率和驱动性能。
机译:基于声子散射机理的超薄体FD SOI MOSFET导热特性研究
机译:具有横向双门的高性能超薄体超薄盒绝缘体MOSFET的分析:具有DIBL的抑制