Optical Characteristics of InAs Quantum Dots Influenced by AlGaAs/GaAs Superlattice Barriers

摘要

We investigated the effect of AlGaAs/GaAs superlattice barriers on the optical properties of InAs quantum dots (QDs) by using photoluminescence (PL) spectroscopy. The samples used in the present work were grown by molecular beam epitaxy (MBE) on the (001) semi-insulated GaAs substrates. Five different types of sample structures were designed and grown to investigate the effects of AlGaAs/GaAs superlattice barriers. In order to identify the effect of superlattice barrier, simple GaAs/InAs QD/GaAs structure was also grown as a reference. Based on our experimental results, the AlGaAs/GaAs superlattice barriers can effectively change the emission peak position of InAs QDs without much sacrificing the optical characteristics of QD structures.