Growth and evaluation of GaN with SiN interlayer by MOCVD

摘要

GaN epilayers grown with introducing a high-temperature SiN interlayer by metalorganic chemical vapour deposition (MOCVD) were investigated by means of XRD, AFM, and TEM. SiN_4 was used as Si source for SiN growth. It was found that by inserting the SiN layer, the subsequently grown GaN layers have a lower threading dislocation density with respect to that in the conventional GaN films. The dislocations were observed to terminate at the SiN/GaN interface, where Si incorporations may occur. It suggests that the quality of the GaN epilayers has been improved by introducing the optimised grown HT-SiN interlayer.