机译:InN中间层上GaN层的MOCVD生长和残余应变的松弛
Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Republic of Korea;
rnDepartment of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Republic of Korea;
rnDepartment of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Republic of Korea;
rnDepartment of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Republic of Korea;
rnDepartment of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Republic of Korea;
rnDepartment of Advanced Materials Science and Engineering, Daejin University, Pocheon, 487-711, Republic of Korea;
rnDepartment of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Republic of Korea Department of Hano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 433-270, Republic of Korea;
MOCVD; GaN; InN; thermal strain; thermal expansion coefficient; XRD; PL;
机译:低温AlN中间层对MO(CVD)在Si(111)上GaN外延层生长的影响
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