FOCUSED ION BEAM ANALYSIS OF Cu/LOW-k METALLIZATION STRUCTURES

摘要

The image contrast in the Focused Ion Beam (FIB) for Cu and low-k dielectric materials is discussed. The milling properties using physical and gas assisted sputtering are investigated for Cu and some low-k materials. The possibility to mill deep vias through multilayer stacks of low-k materials is shown. The excellent performance of FIB for the preparation of TEM specimens of structures with Cu and low-k dielectrics is illustrated with some examples.