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MINUTE PART ANALYZER USING FOCUSED ION BEAM AND MINUTE PART ANALYSIS METHOD USING FOCUSED ION BEAM

机译:使用聚焦离子束的微细零件分析仪和使用聚焦离子束的微细零件分析方法

摘要

PROBLEM TO BE SOLVED: To simply, quickly, and precisely measure a temperature of an analyzed part on a sample surface in analyzing behaviors of elements in the analyzed part on the sample surface.;SOLUTION: In the minute part analyzer using the focused ion beam, Ga whose ion kind is Ga is poured on a surface of a sample 4 by pre-radiating Ga focused ion beam 3 to make it a reference element for measuring a surface temperature of the sample 4, and the temperature of the minute part on the surface of the sample 4 during analysis is determined. Yield of a secondary Ga ion emitted from the sample 4 is measured by pre-radiating the fixed amount of Ga focused ion beam 3 to the sample 4 at every appropriate surface temperature of the sample 4 in advance to obtain a relation of the yield of the secondary Ga ion with the surface temperature of the sample 4. Once this relation is examined, the temperature at the minute part on the surface of the sample 4 can be determined by measuring the yield of the secondary Ga ion when analyzing the plurality of samples 4.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:在分析样品表面上被分析零件中的元素的行为时,可以简单,快速,精确地测量样品表面上被分析零件的温度。解决方案:在微小零件分析仪中,使用聚焦离子束通过预辐射Ga聚焦的离子束3,将其离子种类为Ga的Ga倒在样品4的表面上,使其成为用于测量样品4的表面温度的参考元件,以及在样品4的微小部分的温度。确定分析期间样品4的表面。通过预先在样品4的每个合适的表面温度下向样品4预辐射固定量的Ga聚焦离子束3,来测量从样品4发出的二次Ga离子的产率,以获得样品的产率的关系。二次Ga离子与样品4的表面温度的关系。一旦检查了这种关系,就可以通过在分析多个样品4时测量二次Ga离子的产率来确定样品4表面上微小部分的温度。 。;版权:(C)2012,JPO&INPIT

著录项

  • 公开/公告号JP2012013619A

    专利类型

  • 公开/公告日2012-01-19

    原文格式PDF

  • 申请/专利权人 NIPPON STEEL CORP;

    申请/专利号JP20100152290

  • 发明设计人 KUBOTA NAOYOSHI;HAYASHI SHUNICHI;

    申请日2010-07-02

  • 分类号G01N23/225;H01J49/10;

  • 国家 JP

  • 入库时间 2022-08-21 17:43:07

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