Two-dimensional Charge Carrier Systems for Chemical Sensors: AlGaN/GaN and Diamond

摘要

The use of spontaneously formed two-dimensional electron and hole gases at AlGaN/GaN hetero-interfaces and at the surface of hydrogen-terminated diamond for novel sensor devices is reviewed. The physical origin of these two-dimensional carrier systems is briefly described and recent results concerning their interaction with ions and gases are outlined. In both cases, a controlled oxidation of the exposed surface turns out to be important for an optimum sensor operation.