Newly designed isolated RESURF LDMOS transistor for 60V BCD process provides 20V vertical NPN transistor

摘要

In this paper, we suggested a new isolated RESURF LDMOS described in figure 3. With the use of nwell near the drain region, we can avoid electric field concentration below the drain region as shown in figure 2, b). Pwell dose, pwell length and extended drain dose should be optimized to reduce surface field of the proposed isolated RESURF LDMOS regardless of epi thickness.