A Physics-Based Analytical $hbox{1}/f$ Noise Model for RESURF LDMOS Transistors

摘要

A physics-based model has been implemented to describe the low-frequency noise behavior in differently processed reduced-surface-field lateral double-diffused MOS devices. The developed model is based upon the correlated carrier number and the mobility fluctuation theory known as the unified model but has been modified to account for the fluctuations in the extended drain and the channel. Unlike the unified $hbox{1}/f$ noise model, nonuniform trap distribution has been taken into account with respect to position in the gate oxide and band-gap energy. The effect of stress on dc and noise characteristics has been investigated. Individual resistance and noise components in the channel and in the extended drain regions under the gate and field oxides are evaluated as a function of stress duration. The model is experimentally verified to identify the physical mechanisms for degradation due to stressing.