Method for fabricating low-cost isolated resurf LDMOS and associated BCD manufacturing process

摘要

A method for fabricating a LDMOS device in a semiconductor substrate of a first doping type, including: implanting a series of dopants into the semiconductor substrate using a first mask, and forming a first region of a second doping type adjacent to the surface of the semiconductor substrate, a second region of the first doping type located beneath the first region, and a third region of the second doping type located beneath the second region; implanting dopants into the semiconductor substrate using a second mask, and forming a fourth region of the second doping type adjacent to the first, second and third regions, wherein the fourth region extends from the surface of the semiconductor substrate to approximately the same depth as the third region; and implanting dopants into the first region using a third mask, and form a first well of the first doping type.