Vertically aligned carbon nanotubes grown by plasma enhanced chemical vapor deposition

摘要

Plasma enhanced chemical vapor deposition (PECVD) method [1], which enables growth of carbon nanotubes (CNTs) directly onto substrates, is eminently suitable for preparing CNT as electron sources in field emission displays (FEDs). However, more detailed understanding of growth mechanism and controllability of the CNTs by PECVD is needed for the practical use of the method. Here we report growth characteristics of multiwalled CNTs on silicon (Si) substrates by means of microwave PECVD (MPECVD).