Theoretical investigation of field emission from heavily-doped Al_xGa_(1-x)N

摘要

The field emission current density j from Al_xGa_(1-x)N is calculated. We have shown that a high concentration of carriers can be provided to the conduction band of Al_xGa_(1-x)G by tunneling through the Schottky barrier. The result is used to calculate j in agreement with experiment over the whole range of composition x.